, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. MRF421 telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 designed primarily for application as a high-power linear amplifier from 2.0 product image to 30 mhz. specified 12.5 v, 30 mhz characteristics ? output power = 100 w (pep) minimum gain = 10 db efficiency = 40% intermodulation distortion @ 100 w (pep) ? imd = -30 db (min.) 100% tested for load mismatch at all phase angles with 30:1 vswr case 211-11 maximum ratings rating collector-emitter voltage collector-base voltage emitter-base voltage collector current ? continuous withstand current ? 10s total device dissipation @ tc = 25c derate above 25c storage temperature range symbol vceo vcbo vebo lc ? pd tstg value 20 45 3,0 20 30 290 166 -65 to 4 150 unit vdc vdc vdc adc adc watts w/*c -c thermal characteristics off characteristics characteristic thermal resistance, junction to case symbol rhjc max 0. electrical characteristics (tc = 25=c unless otherwise noted.) characteristic symbol min typ 6 unit ?c/w max unit collector-emitter breakdown voltage (lc = 50 madc; ib = 0} collector-emitter breakdown voltage (lc = 200 madc. vbe = 0) collector-base breakdown voltage (lc = 200 madc, ie = 0) emitter-base breakdown voltage (ie = 10 madc. lc = 0} collector cutoff current (vce = 16 vdc, vbe = 0, tc = 25"c) v(br)ceo vibrjces v(br)cbo v(br)ebo ices 20 45 45 3.0 ? ? ? ? ? _ ? ? ? ? 10 vdc vdc vdc vdc madc (continued) nj semiconductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished b> n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use vi semi-conductors encourages customers to verity that datasheets are current before phcing orders fll l^?lla
electrical characteristics - continued (tc = 25 c unless otherwise noted ) characteristic symbol min typ max on characteristics dc current gain (lc = 5.0adc. vce = 5.0vdc) hfe 10 70 ? dynamic characteristics output capacitance (vcb= 12.5vdc, ie = 0, f = 1.0mhz) cob ? 550 800 unit ? pf functional tests common-emitter amplifier power gain (vcc = 12.5 vdc, pout = 100 w, lc(max, = 10 adc, icq= 150madc. f = 30, 30.001 mhz) collector efficiency (vcc= 12.5 vdc. pout= 100 w, lc(?x)= 10 adc, icq = 1 50 ma, f = 30, 30.001 mhz) intermodulation distortion (1) (vce= 12.5 vdc, poul = 100 w. lc = 10 adc. icq = 150ma, f = 30, 30.001 mhz) gpe n imd 10 40 12 -33 -30 db % db note, i. to proposed eia method of measurement. reference peak envelope power. bias \ / rf \ input s l 1 cr1! *v ?2 r ~? ?"c5 ^pc6 -ir c2 j l1 yr rvv^-i a , l4 (v \ 32 < 12 ,u,t. ? nnfifin x l5 ^c7 q^c8 ? ^ /jl ^c3 l3 >c9 ? /* t s 1 ^c10 12.5v* / 1 \ / rf j n output c1.c2.c4? 170-780 pf, arco 469 c3 ? 80-480 pf. arco 466 cs.c7.c10? erie 0.1 uf. 100 v c6 ? mallory 500 uf @ 15 v electrolytic c9 ? 100 uf. 15 v electrolytic c8 ? 1000 pf, 350 v underwood r1 ? 10 u 25 watt wirewound r2 ? 10 u, 1.0 watt carbon cr1 - 1n4997 li ? .3 turns, #16 wire, 5/16" i.d., 5/16" long l2 ? 12 turns, #16 enameled wire closewound, 1/4" i.d. l3 ? 1-3/4 turns, 1/8" tubing, 3/8" i.d.. 3/8" long l4 ? 10uh molded choke l5 ? 10 ferme beads ? ferroxcube #56-590-65/36 figure 1. 30 mhz test circuit schematic
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